WUPP2017
in Monterey CA, USA
WUPP for Wide Bandgap Semiconductors, 2017
Supported by RCUPP for WBGDs (JSME)
Technical program
November 6
9:20-9:30
Opening remarks
Session 1
9:30-10:00
Electrochemical Oxidation, Threading Dislocations and the Reliability of GaN HEMTs
Carl Thompson (MIT)
10:00-10:30
Development of n-type low resistivity 4H-SiC wafers for power device application
Noboru Ohtani (Kwansei Gakuin University)
10:30-11:00
Radiation Response of Silicon Carbide Devices - Degradation and Functionalization -
Takeshi Ohshima (National Institutes for Quantum and Radiological Science and Technology)
11:00-11:30
Diamond based transistors and diodes for high power application
Srabanti Chowdhury (UC Davis)
Session 2
13:30-14:00
Micro and Nano-Fabrication in Green LEDs
Christian Wetzel (Rensselaer Polytechnic Institute)
14:00-14:30
GaN epitaxy platforms for RF and Power applications
Hugues Marchand (IQE)
14:30-15:00
Epitaxial GaN films fabricated directly on flexible metal foils
Vladimir Matias (iBeam Technologies)
Session 3 “Late news”
15:30-15:50
Smart-Processing for Hard-to-Process Substrates by Applying Innovative “Dilantancy-pad”
and “High-speed-pressure with bowl feed method polishing machine”
Toshiro Doi (Kyushu University)
15:50-16:10
Planarization of Silicon Carbaide and Gallium Nitride Wafers using Catalyst-Referred
Etching (CARE)
Yasuhisa Sano (Osaka University)
16:10-16:30
Evaluation of homoepitaxially grown diamond films on polished diamond substrates
Seong-Woo Kim (Namiki Precision Jewel)
16:30-16:50
NEAT GaN for vertical power devices
Tadao Hashimoto (Sixpoint Materials)
16:50-17:10
High Quality Free-standing GaN Substrates
Qing Wang (Sino Nitride Semiconductor CO., LTD)
November 7
Session 4
9:00-9:30
Investor View of Funding and Outlook for Wide Bandgap Semiconductor Companies
Konrad Jarausch (Capricorn Investment Group)
9:30-10:00
The Challenge for Bulk III-Nitride Materials
Michael Krames (Arkesso LLC)
10:00-10:30
Remote Plasma Chemical Vapor Deposition of III-Nitrides: Growth and Applications
Ian Mann (BluGlass Limited)
10:30-11:00
Characterization of dislocations in wide bandgap semiconductors by etch pit, X-ray
topography, PL imaging, CL mapping and TEM
Yukari Ishikawa (Japan Fine Ceramics Center)
11:00-11:30
Surface Preparation Challenges for GaN and Diamond Substrates
Rajiv Singh (Sinmat Inc, and University of Florida)
Session 5
13:30-14:00
MOCVD growth of GaN on SEMI-spec 200 mm Si
Zhang Li (Singapore-MIT Alliance LEES IRG)
14:00-14:30
Challenges and Opportunities for MOCVD GaN-on-GaN and GaN-on-Si
Mayank Bulsara (TAIYO NIPON SANSO Corp.)
14:30-15:00
Progress on Efficiency Droop Mitigation in Blue and Green LEDs
Parijat Deb (Lumileds LLC)
15:00-15:30
High Power, High Efficiency Semipolar InGaN Lasers for Solid State Lighting
Daniel L. Becerra (University of California, Santa Barbara)
Session 6
16:00-16:30
Recent advance of epitaxial diamond growth on Iridium
Hideyuki Kodama (Aoyama Gakuin University)
16:30-17:00
High-quality AlN on Sapphire templates for UVC LED applications
Cris Ugolini (Nitride solutions)
17:00-17:30
Recent progress of HVPE-grown GaN substrate
Narihito Okada (Yamaguchi University)
17:30-18:00
The Development of High-Quality, UV-transparent Two-inch AlN Single-Crystal Substrate
Takashi Suzuki (Crystal IS, Inc.)
18:00-18:15
Closing Remarks