​

Technical program

 

November 6

​

 

9:20-9:30

Opening remarks

​

Session 1

9:30-10:00

  Electrochemical Oxidation, Threading Dislocations and the Reliability of GaN HEMTs

  Carl Thompson (MIT)

10:00-10:30

  Development of n-type low resistivity 4H-SiC wafers for power device application

  Noboru Ohtani (Kwansei Gakuin University)

10:30-11:00

  Radiation Response of Silicon Carbide Devices - Degradation and Functionalization -

  Takeshi Ohshima (National Institutes for Quantum and Radiological Science and Technology)

11:00-11:30

  Diamond based transistors and diodes for high power application

  Srabanti Chowdhury (UC Davis)

​

Session 2

13:30-14:00

  Micro and Nano-Fabrication in Green LEDs

  Christian Wetzel (Rensselaer Polytechnic Institute)

14:00-14:30

  GaN epitaxy platforms for RF and Power applications

  Hugues Marchand (IQE)

14:30-15:00

  Epitaxial GaN films fabricated directly on flexible metal foils

  Vladimir Matias (iBeam Technologies)

 

 

Session 3 “Late news”

15:30-15:50

  Smart-Processing for Hard-to-Process Substrates by Applying Innovative “Dilantancy-pad”

  and “High-speed-pressure with bowl feed method polishing machine”

  Toshiro Doi (Kyushu University)

15:50-16:10

  Planarization of Silicon Carbaide and Gallium Nitride Wafers using Catalyst-Referred

  Etching (CARE)

  Yasuhisa Sano (Osaka University)

16:10-16:30

  Evaluation of homoepitaxially grown diamond films on polished diamond substrates

  Seong-Woo Kim (Namiki Precision Jewel)

16:30-16:50

  NEAT GaN for vertical power devices

  Tadao Hashimoto (Sixpoint Materials)

16:50-17:10

  High Quality Free-standing GaN Substrates

  Qing Wang (Sino Nitride Semiconductor CO., LTD)

​

​

​

November 7

​

Session 4

9:00-9:30

  Investor View of Funding and Outlook for Wide Bandgap Semiconductor Companies

  Konrad Jarausch (Capricorn Investment Group)

9:30-10:00

  The Challenge for Bulk III-Nitride Materials

  Michael Krames (Arkesso LLC)

10:00-10:30

  Remote Plasma Chemical Vapor Deposition of III-Nitrides: Growth and Applications

  Ian Mann (BluGlass Limited)

10:30-11:00

  Characterization of dislocations in wide bandgap semiconductors by etch pit, X-ray

  topography, PL imaging, CL mapping and TEM

  Yukari Ishikawa (Japan Fine Ceramics Center)

11:00-11:30

  Surface Preparation Challenges for GaN and Diamond Substrates

  Rajiv Singh (Sinmat Inc, and University of Florida)

​
 

Session 5

13:30-14:00

  MOCVD growth of GaN on SEMI-spec 200 mm Si

  Zhang Li (Singapore-MIT Alliance LEES IRG)

14:00-14:30

  Challenges and Opportunities for MOCVD GaN-on-GaN and GaN-on-Si

  Mayank Bulsara (TAIYO NIPON SANSO Corp.)

14:30-15:00

  Progress on Efficiency Droop Mitigation in Blue and Green LEDs

  Parijat Deb (Lumileds LLC)

15:00-15:30

  High Power, High Efficiency Semipolar InGaN Lasers for Solid State Lighting

  Daniel L. Becerra (University of California, Santa Barbara)

​

​

Session 6

16:00-16:30

  Recent advance of epitaxial diamond growth on Iridium

  Hideyuki Kodama (Aoyama Gakuin University)

16:30-17:00

  High-quality AlN on Sapphire templates for UVC LED applications

  Cris Ugolini (Nitride solutions)

17:00-17:30

  Recent progress of HVPE-grown GaN substrate

  Narihito Okada (Yamaguchi University)

17:30-18:00

  The Development of High-Quality, UV-transparent Two-inch AlN Single-Crystal Substrate

  Takashi Suzuki (Crystal IS, Inc.)

​

18:00-18:15

Closing Remarks